Optically Induced Gaps in Disordered Semiconductors |
| A. Kalvováa and B. Velickýa,b aInst. of Phys., Czech. Acad. Sci., Na Slovance 2, 180 40 Praha 8, Czechia bFaculty of Math. and Phys., Charles University, Ke Karlovu 5, 121 16 Praha 2, Czechia |
| Full Text PDF |
| On the example of an explicitly solvable model of a semiconductor with alloy disorder in the conduction band, it is shown that a slowly varying exciting light pulse can be treated in an adiabatic approximation, that is, the self-energy of an electron can be taken as a continuously evolving series of snapshots of self-energies corresponding to a steady illumination with the instantaneous value of the light strength. |
| DOI: 10.12693/APhysPolA.90.837 PACS numbers: 78.47.+p, 71.25.-s |