Universal Behaviour of Magnetoconductance due to Weak Localization in Two-Dimensional Systems - Example of GaInAs Quantum Wells
A. Zduniak, M.I. Dyakonov, E. Litwin-Staszewska and W. Knap
Groupe d'Etudes des Semiconducteurs, Université de Montpellier II, 34095 Montpellier, France
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Weak localization corrections to conductivity of a two-dimensional electron gas are studied by measurements of the magnetic field dependence of the conductivity in GalnAs quantum wells. We observe that, when presented as a function of the normalized magnetic field (x = B/Btr, where B is the magnetic field, Btr = ħ/4eτD, D is the diffusion constant and τ is momentum relaxation time), different samples show very similar high field behaviour. A theoretical description is developed that allows one to describe in a consistent way high and low field behaviour. The theory predicts universal (B-1/2) behaviour of the conductivity correction for all 2D systems in the high field limit (r > 1). Low field behaviour depends strongly on spin and phase relaxation mechanisms. Comparison of the theory with experiment confirms the universal behaviour in the high field limit and allows one to estimate the spin and phase relaxation times for different GaInAs quantum wells.
DOI: 10.12693/APhysPolA.88.1053
PACS numbers: 73.20.Dx, 73.61.Ey