Shear-Horizontal Surface Waves in Half-Space of Piezoelectric Semiconductor with Initial Stresses

Y. Chena, b, L. Yanga, c, X. Fanga, J. Wanga aPiezoelectric Device Laboratory, School of Mechanical Engineering and Mechanics, Ningbo University, 818 Fenghua Road, Ningbo, 315211 Zhejiang, China bSchool of Electrical and Mold Engineering, Taizhou Vocational College of Science and Technology, 288 Jiamu Road, Taizhou, 318020 Zhejiang, China cOffice of Human Resource, Taizhou University, 1139 City Road, Taizhou, 318000 Zhejiang, China

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The propagation characteristics of shear-horizontal waves in the half-space of n-type piezoelectric semiconductor under initial stresses are studied. The phase velocity in the transcendental equation is obtained based on the three-dimensional theory of a piezoelectric semiconductor. The effects of different boundary conditions, initial carrier density, and initial stresses on the phase velocity and attenuation of shear-horizontal waves are analyzed. The results show that the effect of small initial stresses on the dispersion is negligible, and the wave velocity decreases sharply with increasing initial stresses when it is over a certain value. In particular, the initial stress has little effect on the imaginary part of the wave velocity, and the attenuation will be amplified when the initial stress is large enough. These analytical solutions will be valuable in the design of piezoelectric semiconductor devices.

DOI:10.12693/APhysPolA.142.273 topics: shear-horizontal wave, piezoelectric semiconductor, initial stress, dispersion