Analysis of Thickness Vibration Frequencies of FBAR as Layered Structures with Piezoelectric Plates
Yurun Chena, Jiansong Liua, Ji Wanga, b, Tingfeng Maa, b, Jianke Dua, b, Honglang Lic
aPiezoelectric Device Laboratory, School of Mechanical Engineering & Mechanics, Ningbo University, 818 Fenghua Road, Ningbo, 315211 Zhejiang, China
bTXC-NBU Joint Center of Research, School of Mechanical Engineering & Mechanics, Ningbo University, 818 Fenghua Road, Ningbo, 315211 Zhejiang, China
cNational Center for Nanoscience and Technology, 11 Beiyitiao Road, Zhongguancun, 100190 Beijing, China
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Film bulk acoustic resonators as a newer generation of acoustic wave resonators have been a proper replacement of traditional resonators for frequency control and sensor applications with a fast adoption in mobile communication and other major consumer electronics. Extensive research work on the materials, processing, structure, and design has contributed to the phenomenal growth of film bulk acoustic resonators. As a procedure for the selection of optimal design parameters, we started from the layered structures of film bulk acoustic resonators with a one-dimensional model, i.e., only considering the thickness of resonators for the calculation of vibration frequencies in order to support the resonator design. The resonant frequency of thickness-extension mode - a key parameter of resonators - was obtained through the consideration of the elastic and piezoelectric properties of each layer in the resonators structure. It has been proven through numerical examples that in this way we gain an effective approach to the accurate determination of resonant frequency. Clearly, the method based on film bulk acoustic resonators is also helpful for the early stage of product design in the selection of some essential parameters and later combinations for device upgrades.

DOI:10.12693/APhysPolA.140.105
topics: FBAR, wave, vibration, frequency