Calculation of Electron Drift Mobility at Low Electric Field in Hg1-xCdxTe Using Iterative Method |
| S. Najafi Bavani, M. Akhoundi Khezrabad
Department of Physics, Payame Noor University (PNU), P.O. Box 19395-3697, Tehran, Iran |
| Full Text PDF |
| An iteration calculation was carried out to study electron transport properties in Hg1-xCdxTe. We employed the modified iterative procedure so as to increase the computational accuracy in several structures. To calculate mobility, such mechanisms as deformation potential, polar optical phonon, piezoelectric, electron-hole and ionized impurity scattering were taken into consideration. The screening effects of the free carriers on scattering probabilities, band non-parabolicity, admixture of p-functions and arbitrary degeneracy of the electron distribution were considered. Electron drift mobility was calculated for different temperatures and doping dependences. The analysis suggested that the electron drift mobility decreases as the temperature increases from 100 K to 300 K. The temperature dependence of the MCT mobility results from the competition among various scattering mechanisms which are temperature-dependent. In the case of low temperatures (77 K), with increasing doping concentration, the electron mobility decreases quicker when compared to the high temperatures (150 and 300 K). Furthermore, we have concluded that the x-dependence of the Hg1-xCdxTe mobility results primarily from the x-dependence of a bandgap as well as from the x-dependence of effective masses. Finally, it can be concluded that at p-type and intrinsic semiconductor (ZxT≤1 ), the effect of the electron-hole scattering is significant while at n-type semiconductor (ZxT≫1), the electron-hole scattering can be ignored. |
DOI:10.12693/APhysPolA.139.97 topics: iteration method, electron drift mobility, scattering, Hg1-xCdxTe |