Technique of Specific Conductivity Measurement of Anisotropic Semiconductor Plates and Films

V.V. Filippova, b, S.V. Mitsuka, S.E. Luzyanina, V.P. Tigrova aLipetsk State Pedagogical University, Lenina Str. 42, Lipetsk 398020, Russian Federation bLipetsk State Technical University, Moskovskaya Str. 30, Lipetsk 398600, Russian Federation

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The paper presents a fast technique to identify the components of specific conductivity tensor of thin semiconductor planes. The proposed technique is based on a well-known method with a linear location of a four-probe tester. It is scientifically backed up by solving the relevant boundary problems of electrodynamics and characterized by the simplicity of measurements and calculations. Moreover, the suggested method does not require the use of complicated equipment and also the boundary conditions have been taken into account. Experimental testing has been carried out on monocrystals of diarsenide of cadmium and diarsenide of zinc. Practical recommendations are given on how to make the necessary measurements more precise.

DOI:10.12693/APhysPolA.138.759 topics: anisotropic semiconductor, electroconductivity tensor, potential distribution, diarsenide of cadmium, fourprobe method