Electronic and Optical Properties of Quantum Dot Surrounded by Doped Cylindrical Nanowire

Maryam Moradia, Mahmood Moradib, S.M. Elahia, S.S. Parhizgara aDepartment of Physics, Faculty of Sciences, Science and Research Branch, Islamic Azad University, Tehran, Iran bDepartment of Physics, College of Sciences, Shiraz University, Shiraz 71946-84795, Iran

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The electronic and optical properties of InAs spherical quantum dot (QD) at the center of a doped n-type GaAs cylindrical nanowire were investigated by solving the Schrödinger and Poisson equations self consistently. The effect of donor density of a cylinder and the size of QD on the allowed energy levels, electrostatic potential, conduction bands and transition energy of the system were calculated. The optical properties related to intra-band transitions in the conduction band of this structure were studied through the compact density matrix approach. The results showed that the peak position and magnitude of optical absorption coefficients, which are mainly located in the far infrared region, and the refractive index changes were significantly affected by the incident optical intensity and the doping concentration of the surrounding media

DOI:10.12693/APhysPolA.138.561 topics: n-type doping, cylindrical nanowire, spherical quantum dots, self-consistent Schrödinger-Poisson