Electrical Transport Properties of Yb8-xYxV2O17 (x=0,2,8) |
| B. Sawicki a, M. Piz b, E. Filipek b, T. Grońa and H. Duda a
aUniversity of Silesia, Institute of Physics, Uniwersytecka 4, 40-007 Katowice, Poland bWest Pomeranian University of Technology Szczecin, Faculty of Chemical Technology and Engineering, Department of Inorganic and Analytical Chemistry, al. Piastów 42, 71-065 Szczecin, Poland |
| Full Text PDF |
| The UV-vis-NIR and electrical properties of Yb8-xYxV2O17 for x=0, 2, and 8 were investigated. The band energy gap of 2.6 eV determined for Yb6Y2V2O17 (x=2) and comparable for the remaining compounds with x=0 and 8 is characteristic for insulators. Low electrical conductivity with a characteristic minimum shifting to higher temperatures from 322, via 360 to 370 K in the sequence x=0, 2 and 8, which decreases with increasing content of ytterbium was observed. Temperature dependence of thermoelectric power showed n-p transition at 410 and 467 K for x=0 and 2, respectively, and n-type conductivity for x=8, indicating mainly n-type electrical conductivity. A breakdown voltage of 26 V/mm is mainly observed for the I-V characteristics at 400 K and showing a varistor-like behavior. |
DOI: 10.12693/APhysPolA.132.363 PACS numbers: 72.20.Pa, 72.80.Ga, 75.20.-g |