Electronic Properties of Stacked ZrO2 Films Fabricated by Atomic Layer Deposition on 4H-SiC
K. Króla, N. Kwietniewski a, S. Gierałtowska b, Ł. Wachnicki b and M. Sochacki a
aInstitute of Micro- and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
bInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-688 Warsaw, Poland
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The electronic properties of ZrO2/SiO2 stacked dielectric layers are reported as a function for temperature of the atomic layer deposition process. A dielectric layer has been characterized by C-V and I-V measurements of MIS structures. A strong dependence of κ value of ZrO2 layer has been observed as a function of deposition temperature T. The values within the range of κ ≈16-26 have been obtained. All measured stacked dielectric layers show an increase in dielectric breakdown voltage compared to simple SiO2 dielectric by average factor of 1.7 and factor of 2 (21 MV/cm) for high-κ oxides deposited at low temperature (85°C).

DOI: 10.12693/APhysPolA.132.329
PACS numbers: 81.16.Pr, 77.84.Bw, 77.55.dj