Transport Characteristics of Gated Core-Multishell Nanowires: Self-Consistent Approach
T. Palutkiewicz, M. Wołoszyn, P. Wójcik and B.J. Spisak
AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, al. A. Mickiewicza 30, 30-059 Kraków, Poland
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The influence of the applied gate voltage on the coherent propagation of the conduction electrons through the InGaAs/InP core-multishell nanowires with the surrounding gate is considered. The solution of the three-dimensional Schrödinger equation within the effective mass approximation is found using the adiabatic method. The electrostatic potential distribution generated by the all-around gate is determined from the self-consistent procedure applied to the Schrödinger-Poisson problem. The Landauer-Büttiker formalism and quantum transmission boundary method are applied to calculate the transport properties of the considered nanosystem.

DOI: 10.12693/APhysPolA.130.1190
PACS numbers: 72.80.Ey, 73.63.Nm, 85.35.-p