Elastic-Plastic Transition in MBE-Grown GaSb Semiconducting Crystal Examined by Nanoindentation
A. Majtyka a, M. Trębala a, A. Tukiainen b, D. Chrobak c, W. Borgieł a,d, J. Räisänen e and R. Nowak a
aNordic Hysitron Laboratory, Department of Materials Science and Engineering, Aalto University, 00076 Aalto, Finland
bOptoelectronics Research Centre, Tampere University of Technology, 33101 Tampere, Finland
cInstitute of Materials Science, University of Silesia, 75 Pułku Piechoty 1, 45-500 Chorzów, Poland
dInstitute of Physics, University of Silesia, 75 Pułku Piechoty 1, 45-500 Chorzów, Poland
eDepartment of Physics, University of Helsinki, P.O. Box 43, FI-00014, Helsinki, Finland
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The present paper concerns the elastic-plastic nanodeformation of Te-doped GaSb crystals grown by molecular beam epitaxy on the n-type of GaSb substrate. The conventional analysis of nanoindentation data obtained with sharp triangular (Berkovich) and spherical tip revealed the elastic modulus (E=83.07± 1.78 GPa), hardness (H=5.19±0.25 GPa) and "true hardness" (HT=5.73±0.04 GPa). The registered pop-in event which indicates the elastic-plastic transition in GaSb crystal points towards the corresponding yield strength (σY=3.8±0.1 GPa). The origin of incipient plasticity in GaSb crystal is discussed in terms of elastic-plastic deformation energy concept.

DOI: 10.12693/APhysPolA.130.1131
PACS numbers: 81.40.Jj, 62.20.F-, 81.15.Hi, 81.05.Ea