The Calculation for Strain Distributions and Electronic Structure of InAs/GaAs Quantum Dots Based on the Eight-Band k·p Theory
Changgan Shua and Yumin Liua,b
aState Key Laboratory of IPOC, Beijing University of Posts and Telecommunications, Beijing 100876, China
bInstitute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Received: September 9, 2015
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In order to analyze the strain distribution of InAs/GaAs quantum dot in a pyramidal geometry, the traditional calculation method is based on the single band envelope approximation with the modified band edge from the eight band k·p theory. In this paper, we use the eight band k·p Hamiltonian to calculate, and the piezoelectric effects and the electronic structure are also discussed subsequently. To this end, some necessarily derived formulae in calculations about using the finite element calculation software COMSOL are presented in this paper. The results show the details about strain distributions, piezoelectric effects and electronic structure of an InAs/GaAs pyramidal quantum dot, verify the feasibility and efficiency of the calculation method.

DOI: 10.12693/APhysPolA.129.371
PACS numbers: 73.21.La, 73.63.Kv