Anisotropic Phase Field Model of Heteroepitaxial Growth
Dieu Hung Hoanga, M. Beneša and J. Stráskýb
aDepartment of Mathematics, Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Trojanova 13, Prague, Czech Republic
bDepartment of Physics of Materials, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, Prague, Czech Republic
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We study the heteroepitaxial growth of thin layers by means of the modified phase-field model with the incorporated anisotropy. The influence of elastic and surface energies on the layer growth is considered. For numerical solution of the model, an explicit numerical scheme based on the finite element method is employed. The obtained computational results with various anisotropy settings demonstrate the anisotropic thin-layer pattern growth.

DOI: 10.12693/APhysPolA.128.520
PACS numbers: 81.10.Aj, 05.70.Ln, 81.40.Jj, 81.30.Fb