Dependence of ZnO Nanostructured Thin Films Properties on Growth Temperature by APCVD Method
M. Maleki a and S.M. Rozati b
aDepartment of Physics, Faculty of Science, Fouman and Shaft Branch, Islamic Azad University, Fouman, Iran
bCVD Lab., Physics Department, University of Guilan, Namjoo St., Faculty of Science, Rasht, Iran
Received: January 9, 2015; In final form: April 19, 2015
Full Text PDF
In this paper, the effect of substrate temperature on the electrical, structural, morphological and optical properties of nanostructured polycrystalline zinc oxide thin films were investigated by the Hall measurement, X-ray diffraction, scanning electron microscopy and UV-visible spectrophotometer, respectively. Then these modified thin films were deposited on two kinds of single crystal and polycrystalline of n- and p-type Si in three different substrate temperatures of 300, 400 and 500°C by low cost atmospheric pressure chemical vapor deposition method. Like the samples grown on the glass substrate, with increase of the temperature in samples grown on single crystal Si, preferred orientation changes from (100) to (002), while in samples deposited on poly crystalline Si, preferred orientation remains (100).

DOI: 10.12693/APhysPolA.128.367
PACS numbers: 73.90.+f