Compact Modeling of the Performance of SB-CNTFET as a Function of Geometrical and Physical Parameters
|A. Diabi, A. Hocini
Department of Electronics, University Mohamed Boudiaf of M'sila BP.166, Route Ichebilia, M'sila 28000 Algeria
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|In this work, we study the effects of geometrical and physical parameters on the performances of SB-CNTFET using a compact model. The influences of the physical parameters (height of the Schottky barrier (ΦSB) capacity of oxide layer (CINS) and geometrical parameter (nanotube diameter (dCNT)) on the static performance (ION/IOFF) of SB-CNTFET have been investigated. We present a detailed analysis of the electrical performance of the SB-CNTFET or current-voltage characteristics (ID=f(VDS) for different values of VGS, and also the characteristics (ID=f(VGS)) for different values of VDS. All these circuits are studied for a fixed value of ΦSB=0.275 eV.|
PACS numbers: 85.35.Kt, 85.30.Tv.