Elastic Scattering in Kane Type Semiconductor Circular Dots
A.M. Babanlıa,b, E. Artunç b and T.F. Kasalakc
aInstitute of Physics, Azerbaijan National Academy of Sciences, 370143 Baku, Azerbaijan
bDepartment of Physics, University of Süleyman Demirel, 32260 Isparta, Turkey
cDepartment of Informatics, University of Akdeniz, 07058 Antalya, Turkey
Received: June 4, 2014; Revised version: December 9, 2014; In final form: January 27, 2015
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In this paper we have investigated the scattering of electrons by a circular narrow penetrable δ-type potential barrier in A3B5 type semiconductors by using three-band Kane model. By using the Kane equations with the continuous conditions of the wave functions and flux discontinuous at the interface of two circular dots, we have analytically calculated the total cross-section and the Boltzmann conductivity for the semiconductor quantum rings with delta potential barrier. It has been shown that the quasi-bound states appear as peaks in the cross-section.

DOI: 10.12693/APhysPolA.127.811
PACS numbers: 73.22.Pr, 73.20.D-