Temperature Dependence of the Zero-Bias Conductance in the Graphene NIS Junctionx
M.M. Wysokiński
Marian Smoluchowski Institute of Physics, Jagiellonian University, W.S. Reymonta 4, 30-059 Kraków, Poland
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The temperature dependence of the zero-bias conductance of the graphene-based, ballistic junction composed of the three consecutive regions: normal, with potential barrier ("insulating") and superconducting (NIS), is analyzed within the extended Blonder-Tinkham-Klapwijk approach. Within this approach we have found that oscillatory behavior of the conductance as a function of barrier strength is suppressed by the temperature - the amplitude diminishes with heating up the junction. Moreover, the subtle, although nontrivial feature of the system is reported: the average over the period of the oscillations of the zero-bias conductance for relatively small Fermi level mismatch behaves non-monotonically with the increase of the temperature with the maximum roughly at T/Tc ≈ 0.5.

DOI: 10.12693/APhysPolA.126.A-36
PACS numbers: 74.45.+c, 73.23.Ad