Hall Effect in GdB6
M. Anisimova, A. Bogacha, V. Glushkova,b, S. Demisheva,b, N. Samarina, N. Shitsevalovac, A. Levchenkoc, V. Filippovc, A. Kuznetsovd, K. Flachbarte, N. Sluchankoa
aA. M. Prokhorov General Physics Institute of RAS, Vavilov str. 38, 119991 Moscow, Russia
bMoscow Institute of Physics and Technology, Institutskii per. 9, 141700 Dolgoprudnyi, Russia
cI. Frantsevich Institute for Problems of Materials Science NAS, Krzhyzhanovsky str. 3, 03680 Kiev, Ukraine
dMoscow Engineering Physics Institute, Kashirskoe sh. 31, 115409 Moscow, Russia
eInstitute of Experimental Physics SAS, Watsonova 47, 040 01 Košice, Slovakia
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The Hall effect of GdB6 has been studied on high quality single crystals in the temperature range 2-150 K and in magnetic field of 1 T. The obtained data allow to detect anomalies in the antiferromagnetic (AF) phase including (i) a drastic enhancement of negative Hall coefficient below TN1 ≈ 15.5 K and (ii) the appearance of an anomalous Hall effect at TN2 ≈ 4.7 K. Possible scenarios of the AF ground state formation are discussed.

DOI: 10.12693/APhysPolA.126.348
PACS numbers: 72.15 Gd