Electrical Properties of SbSI/Sb2S3 Single and Double Heterostructures
B. Toroń, M. Nowak, A. Grabowski and M. Kępińska
Solid State Physics Section, Institute of Physics, Silesian University of Technology, Z. Krasińskiego 8, 40-019 Katowice, Poland
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The SbSI/Sb2S3 single heterostructures as well as Sb2S3/SbSI/Sb2S3 and SbSI/Sb2S3/SbSI double heterostructures have been produced by applying CO2 laser treatment of p-type SbSI single crystals. The current-voltage and transient characteristics of these heterostructures have been measured in temperatures below and above the SbSI single crystal Curie temperature (Tc = 293 K). The results have been fitted with appropriate theoretical formulae to determine the following types of the investigated heterojunctions: P-p SbSI/Sb2S3, p-P-p Sb2S3/SbSI/Sb2S3 and P-p-P SbSI/Sb2S3/SbSI. Influence of the illumination on electrical properties of SbSI/Sb2S3 single and double heterostructures has been reported. Fabricated new structures may be potentially applicable in electronics and optoelectronics as a new type of metal-ferroelectric-semiconductor devices.

DOI: 10.12693/APhysPolA.124.830
PACS numbers: 74.78.Fk, 79.60.Jv, 73.40.-c, 78.66.-w