Fabrication and Characterization of Photosensitive n-CdO/p-InSe Heterojunctions
Z.R. Kudrynskyia, Z.D. Kovalyuka, V.M. Katerynchuka, V.V. Khomyakb, I.G. Orletskyb and V.V. Netyagaa
aInstitute for Problems of Materials Science of National Academy of Sciences of Ukraine, Iryny Vilde 5, Chernivtsi 58001, Ukraine
bChernivtsi National University, Kotsubynskogo, 2, Chernivtsi 58012, Ukraine
Received: February 16, 2013; In final form: April 3, 2013
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Photosensitive n-CdO/p-InSe heterojunctions were developed and studied for the first time. The heterojunctions were fabricated by dc reactive magnetron sputtering of CdO thin films onto the freshly cleaved p-InSe single-crystal substrates (0 0 1). Surface morphology of the obtained films was studied by means of atomic force microscopy. From the X-ray diffraction result it is shown that the CdO film is polycrystalline with cubic structure. The mechanisms of current transport through the space-charge region under forward and back biases were established by investigation of temperature dependences of the I-V characteristics. The main photoelectric parameters and the photosensitivity spectra were measured at room temperature.

DOI: 10.12693/APhysPolA.124.720
PACS numbers: 73.40.Lq, 73.40.Gk, 68.35.B-, 72.20.Jv