ACTA

Superconducting Layers by Gallium Implantation and Short-Term Annealing in Semiconductors

J. Fiedler^{a, b}, V. Heera^a, M. Voelskow^a, A. Mücklich^a, H. Reuther^a, W. Skorupa^a, G. Gobsch^b and M. Helm^a
^aInstitute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 51 01 19, D-01314 Dresden, Germany
^bExperimental Physics, Institute of Physics, Ilmenau University of Technology, Weimarer Str. 32, 98693 Ilmenau, Germany

Full Text PDF

Superconducting layers in silicon and germanium are fabricated via gallium implantation through a thin SiO₂ cover layer and subsequent rapid thermal annealing. Gallium accumulation at the SiO₂/Si and SiO₂/Ge interfaces is observed but no pure gallium phases were found. In both cases superconducting transition occurs around 6-7 K which can be attributed to the metallic conducting, gallium rich interface layer. However, the superconducting as well as the normal-state transport properties in gallium overdoped silicon or germanium are different.

DOI: 10.12693/APhysPolA.123.916
PACS numbers: 74.78.-w