Electrical Resistivity of the Monoatomic Metallic Layer
A. Paja and A. Działo
AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, Department of Solid State Physics, al. A. Mickiewicza 30, 30-059 Krakow, Poland
Received: December 31, 2012; in final form: March 8, 2013
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We present new formula which describes the change of electrical resistivity of a monoatomic metallic layer with temperature. The results are compared with those given by the Bloch-Grüneisen formula for bulk metals. Our calculated values compared with those for bulk materials are significantly higher at low temperatures (T<0.1θ) and apparently lower at the remaining range of temperatures. Both effects can be explained by the low dimensionality of the sample.

DOI: 10.12693/APhysPolA.123.770
PACS numbers: 73.50.-h, 73.50.Bk, 73.63.-b, 73.63.Hs