ACTA

Electrical Characterizations of Schottky Diodes on ITO Modified by Aromatic SAMs

A.K. Havare^a, S. Okur^b, N.T. Yagmurcukardes^c, M. Can^d, H. Aydin^c, M. Seker^e and S. Demic^b
^aToros University, Faculty of Engineering, Mersin, Turkey
^bIzmir Katip Celebi University, Material Science and Engineering, Çiğli, İzmir, Turkey
^cIzmir Institute of Technology, Faculty of Science, Material Science and Engineering, Izmir, Turkey
^dInstitute of Solar Energy, Ege University, Izmir, Turkey
^eOndokuz Mayıs University, Science and Arts Faculty, Department of Physics, Samsun, Turkey

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In order to understand the electronic properties of the organic Schottky diode, ITO/TPD/Al and ITO/SAM/TPD/Al organic Schottky devices were fabricated to obtain current-voltage characteristics. From the slopes and y-axis intercepts of the plots, the values of the ideality factor, barrier heights of the ITO/SAM/TPD/Al diode were determined as 2.03 and 0.56 eV, respectively. The surface characterizations of modified and unmodified ITO were performed via atomic force microscopy.

DOI: 10.12693/APhysPolA.123.456
PACS numbers: 73.20.Hb, 73.20.Mf, 73.21.-b, 73.22.-f, 73.25.+i, 73.40.Ei, 73.40.Jn, 73.40.Ns