Parameters of an Unique Condenson State in the Structure of the In4 Se3 Crystal
M. Sznajdera, Y.S. Limb, K.E. Glukhovc, L.Yu. Kharkhalisc, and D.M. Berchaa, c
aInstitute of Physics, University of Rzeszów, T. Rejtana 16a, 35-310 Rzeszów, Poland
bGreen Ceramics Division, Korea Institute of Ceramic Engineering and Technology, 233-5 Gasan-dong, Geumcheon-gu, Seoul 153-801, Korea
cInstitute of Physics and Chemistry of Solid State, Uzhgorod National University, Ukraine
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Based upon the ab initio band structure calculations results the dispersion law parameters of charge carriers of the orthorhombic In4 Se3 semiconductor as well as of its Sn- and Te-doped compounds were calculated. This allowed to estimate parameters of the electron condenson states in those compounds.
DOI: 10.12693/APhysPolA.122.1115
PACS numbers: 71.15.Mb, 71.20.-b, 71.20.Nr, 71.38.-k