Electrical Properties of p-ZnTe/n-CdTe Photodiodes |
| S. Chusnutdinowa, V.P. Makhniyb, T. Wojtowicza and G. Karczewskia
aInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland bYuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky Str., 58012 Chernivtsi, Ukraine |
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| Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of photovoltaic, thin-film p-ZnTe/n-CdTe heterojunctions have been studied in the temperature range of 280-400 K. The p-n junctions were grown by MBE on (100) semi-insulating GaAs substrates. From the analysis of I-V and C-V curves the potential barrier height of the junctions and its temperature dependence are determined. The relatively large value of the temperature coefficient of the potential barrier height (2.5-3.0 × 10-3 eV/K) indicates a high density of defects at the p-ZnTe/n-CdTe interface. The presence of interface defects limits the efficiency of the solar energy conversion: of these devices. |
| DOI: 10.12693/APhysPolA.122.1077 PACS numbers: 81.15.Hi, 73.61.Ga, 85.60.Dw, 88.40.jm |