Undulator-Like Radiation and Cooperative Phenomenon in Semiconductor Microstructure with Grating
I. Tralle and P. Zięba
Institute of Physics, Mathematics and Natural Sciences Department, University of Rzeszów, al. T. Rejtana 16A, 35-310 Rzeszów, Poland
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In the article the cooperative N2-effect is considered, that is the radiation whose power is ım N2, where N is the number of emitters which in this case is equal to the number of electrons in a bunch. The suggested effect is the result of combining two other effects, Gunn-effect in GaAs and undulator-like radiation which can be produced by means of microstructure with grating (microundulator). It is very probable that the effect can be used for the developing of a new semiconductor-based room temperature source of the THz radiation.
DOI: 10.12693/APhysPolA.121.522
PACS numbers: 41.60.-m, 42.50.Gy, 73.61.Ey, 73.40.kp, 73.50.Fq