Compact Modeling for Submicron Fully Depleted SOI MOSFET's
R. Remmouchea, b, N. Boutaouib and H. Bouridaha, b
aElectronics Department, Jijel University, 18000 Jijel, Algeria
bLEM Laboratory, Jijel University, 18000 Jijel, Algeria
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In this paper, we have developed a novel compact charge-conservative model for fully depleted silicon-on-insulator MOSFETs and implemented it in SPICE3. Our model is valid for the DC, small-signal and large-signal simulations over a wide range of temperature. Simulations made using the model, following parameter extraction, are validated by comparison with experimental data.
DOI: 10.12693/APhysPolA.121.190
PACS numbers: 73.40.Qv, 85.30.Tv, 85.40.Bh