ACTA

Enhancement of the Ultraviolet Luminescence Intensity from Cd-Doped ZnO Films Caused by Exciton Binding

I. Shtepliuk^a, G. Lashkarev^a, O. Khyzhun^a, B. Kowalski^b, A. Reszka^b, V. Khomyak^c, V. Lazorenko^a and I. Timofeeva^a
^aI. Frantsevich Institute for Problems of Material Science, NASU, 03680, Kiev-142, Ukraine
^bInstitute of Physics, Polish Academy of Sciences, Warsaw, Poland
^cChernivtsi National University, 58012, Chernivtsi, Ukraine

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ZnO films doped with the cadmium (0.4-0.6%) were grown on crystalline sapphire c-Al₂O₃ substrates applying radiofrequency magnetron sputtering at the temperature of 400°C in Ar-O₂ atmosphere. The as-grown films were investigated in detail using X-ray diffraction, X-ray photoelectron spectroscopy, and cathodoluminescence spectra. The X-ray diffraction analysis revealed that the films possess a hexagonal wurtzite-type structure with the dominant crystallite orientation along the c axis. It was found that the small concentration of the cadmium significantly enhances the ultraviolet emission associated with excitonic transitions. We suggest that this enhancement effect mainly results from appearance of the cadmium isoelectronic traps, which may bind an exciton, thereby increasing the probability of radiation recombination. The effect of Cd isoelectronic impurity on structural and luminescent properties of ZnO films is discussed.

DOI: 10.12693/APhysPolA.120.914
PACS numbers: 78.55.Et, 78.67.Bf, 81.05.Dz, 81.07.Bc