ACTA

Electronic Properties of Thin HfO₂ Films Fabricated by Atomic Layer Deposition on 4H-SiC

A. Taube^{a, b}, S. Gierałtowska^c, T. Gutt^a, T. Małachowski^a, I. Pasternak^a, T. Wojciechowski^c, W. Rzodkiewicz^a, M. Sawicki^c and A. Piotrowska^a
^aInstitute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
^bInstitute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
^cInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

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Applicability of thin HfO₂ films as gate dielectric for SiC MOSFET transistor is reported. Layers characterisation was done by means of atomic force microscopy and scanning electron microscopy, spectroscopic ellipsometry and C-V and I-V measurements of MIS structures. High permittivity dielectric layers were deposited using atomic layer deposition. Investigation showed high value of κ = 15 and existence of high density surface states (5 × 10¹² eV^-1 cm^-2) on HfO₂/SiC interface. High leakage current is caused probably due to low conduction band offset between hafnium oxide and silicon carbide.

DOI: 10.12693/APhysPolA.119.696
PACS numbers: 77.55.dj, 77.22.Jp, 73.40.Qv, 81.15.Gh