Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to 15 K
T. Laurenta Faurie c, and B. Beaumont c
aInstitut d'Electronique du Sud, UMR 5214 - CNRS/Université Montepellier 2, Pl. E. Bataillon, 34095 Montpellier, France
bCentre de Recherche sur l'Hétéro-Epitaxie et ses Applications, UPR 10 - CNRS, R. Bernard Grégory, 06560 Valbonne, France
cLUMILOG, 2720, Ch. Saint Bernard Les Moulins I, 06220 Vallauris, France
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We report measurements of the pulsed and dc current-voltage characteristics of AlGaN/GaN high-electron-mobility transistors as functions of geometry, temperature (from 300 down to 15 K), and operating conditions. An increase in the drain current with shortening of the pulse width from 1 μs to 400 ns is found to be significant at room temperature whilst this behavior is inverted or even removed at 77 and 15 K temperatures.
DOI: 10.12693/APhysPolA.119.196
PACS numbers: 72.80.Ey, 73.21.Fg, 73.40.-c