Double Reflection of Electron Spin in Semiconductors
A. Dargys
Center for Physical Sciences and Technology, Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
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Reflection of spin-polarized electron from a potential barrier in bulk semiconductor in the presence of spin-orbit interaction is considered. The spin-orbit interaction brings about double electron reflection at oblique incidence of electronic beam onto the barrier. The competition between the Rashba and Dresselhaus spin-orbit mechanisms during double reflection is discussed. The problem was solved within the Clifford algebra framework, which allows one to describe the spin in a real Euclidean ℰ3 space rather than in an abstract Hilbert space.
DOI: 10.12693/APhysPolA.119.161
PACS numbers: 85.75.-d, 72.25.Dc, 71.70.Ej, 03.65.Fd