Frequency Dependent Electrical Characteristics οf Au/n-Si/CuPc/Au Heterojunction
Z. Ahmad, M.H. Sayyad, Kh.S. Karimov, M. Saleem and M. Shah
Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi-23640, NWFP, Pakistan
Received: February 14, 2008; In final form: October 19, 2009
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Electrical characteristics of the heterojunction fabricated by thermal deposition of copper phthalocyanine (CuPc) on an n-silicon substrate have been investigated. The frequency has significant effect on capacitance (C), conductance (G) and series resistance (Rs) interface states (Dit) of the junction. Measured capacitance and conductance were corrected for Rs. The conductance technique was used to measure the density of the interface states. This method revealed the value of the interface state density distribution for the Au/n-Si/CuPc/Au interfaces of the order of 1012 cm-2 eV-1.
DOI: 10.12693/APhysPolA.117.493
PACS numbers: 79.60.Jv, 73.90.+f