ACTA

Influence of SiC Surface Preparation on Homoepitaxial Growth; X-ray Reflectometric Studies

K. Mazur^a, W. Wierzchowski^a, K. Wieteska^b, W. Hofman^a, H. Sakowska^a, K. Kościewicz^a, W. Strupiński^a and W. Graeff^c
^aInstitute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
^bInstitute of Atomic Energy Polatom, 05-400 Otwock-Świerk, Poland
^cHASYLAB at DESY, Notkestr. 85, 22-603 Hamburg, Germany

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X-ray reflectometric and diffraction topographic methods were applied for examination of 4H and 6H silicon carbide substrates finished with various regimes, as well as, silicon carbide epitaxial layers. The investigations indicated a very good quality of the substrate surfaces finished with the process established at the Institute of Electronic Materials Technology, which provided the surface roughness σ = 0.55 ± 0.07 nm for 4H-SiC wafers. These values were better than those of substrate wafers offered by many commercial producers. The surface roughness was decreased during the initial high temperature etching to σ = 0.22 ± 0.07 nm. A relatively good structural quality was confirmed in the case of 4H epitaxial wafers deposited on the substrates prepared from the crystals manufactured at the IEMT, with the 8° off-cut from the main (001) plane.

DOI: 10.12693/APhysPolA.117.272
PACS numbers: 61.05.cm, 61.72.Ff, 61.72.up