Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure

A. Misiuka, W. Wierzchowskib, K. Wieteskac, C.A. Londosd, A. Andrianakisd, J. Bak-Misiuke, D. Yangf and B. Surmab a Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland b Institute of Electronic Materials Technology, 01-919 Warsaw, Poland c Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland d University of Athens, Athens 15784, Greece e Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland f State Key Laboratory of Silicon Materials, Hangzhou 310027, PR China

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Defect structure of Czochralski grown silicon (Cz-Si) with nitrogen admixture, cN ≤ 5 × 1014 cm-3 (Cz-Si:N), annealed for up to 10 h at 1270-1400 K under hydrostatic Ar pressure ≤ 1.1 GPa, was investigated by synchrotron diffraction topography (HASYLAB, Germany), X-ray reciprocal space mapping, and infrared spectroscopy. Extended defects were not detected in Cz-Si:N processed at up to 1270 K. Such defects were created, however, in Cz-Si:N pre-annealed at 923 K and next processed at 1270 K or in as-grown Cz-Si:N processed at 1400 K. Investigation of temperature-pressure effects in nitrogen-doped silicon contributes to the understanding of defect formation in Cz-Si:N.

DOI: 10.12693/APhysPolA.117.344 PACS numbers: 61.05.cp, 61.72.-y, 61.72.Ff, 61.72.uf, 62.50.-p