TEM Characterization of Polysilicon and Silicide Fin Fabrication Processes of FinFETs |
| J. Ratajczak a, A. Łaszcz a, A. Czerwinski a, J. Kątcki a, X. Tang b, N. Reckinger b, D.A. Yarekha c, G. Larrieu c and E. Dubois c
a Instytut Technologii Elektronowej, al. Lotników 32/46, 02-668 Warszawa, Poland b Microelectronics Laboratory, Université catholique de Louvain, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium c Institut d'Electronique, de Microélectronique et de Nanotechnologie, IEMN/ISEN UMR CNRS 8520, Avenue Poincaré, Cité Scientifique, 59652 Villeneuve d'Ascq Cedex, France |
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| The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs. |
| DOI: 10.12693/APhysPolA.116.S-89 PACS numbers: 85.40.-e, 68.37.Lp |