Anomalous Hall Effect in IV-VI Semiconductors

A. Dyrdał a, V.K. Dugaev b,c,d, J. Barnaś a,e, B. Brodowska f and W. Dobrowolski f a Department of Physics, A. Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland b Department of Physics, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland c Department of Physics and CFIF, Instituto Superior Técnico, Technical University of Lisbon, Av. Rovisco Pais, 1049-001 Lisbon, Portugal d Frantsevich Institute for Problems Materials Science, National Academy of Sciences of Ukraine, Vilde 5, 58001 Chernovtsy, Ukraine e Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań, Poland f Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

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We consider theoretically the topological contribution to the anomalous Hall effect in narrow-gap IV-VI magnetic semiconductors in which the relativistic terms are relatively large and determine both the non-parabolicity of the energy spectrum and strong spin-orbit interaction. We use the relativistic Dirac model and linear response theory to calculate this contribution. Experimental data on the anomalous Hall effect in these compounds are also presented and discussed.

DOI: 10.12693/APhysPolA.115.287 PACS numbers: 72.20.-i, 75.50.Pp, 72.25.Dc