Electronic Structure of Y3Al5O12:V Single Crystals, Comparison with Sintered Ceramics |
| M. Kruczek a,b, E. Talik a, J. Kusz a, H. Sakowska b, M. Świrkowicz b and H. Węglarz b
a Institute of Physics, University of Silesia, Uniwersytecka 4, 40-007 Katowice, Poland b Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland |
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| Y3Al5O12 (YAG) single crystals doped with vanadium ions (V3+) were obtained by the Czochralski method. The X-ray photoelectron spectra of YAG:V annealed in reducing atmospheres: H2, vacuum and H2 + vacuum are presented and compared with the spectra of the YAG ceramics. The X-ray photoelectron spectra showed that the vanadium dopant concentration in YAG:V crystals is lower than a nominal one. For the "as grown" YAG:2.8at.%V crystal vanadium exists in the mixed valence state. The increase in lattice parameters for the samples annealed in hydrogen was found. |
| DOI: 10.12693/APhysPolA.115.209 PACS numbers: 33.60.+q, 33.70.Jg, 79.60.-i, 79.60.Bm |