Formation of Nanostructured Layers for Passivation of High Power Silicon Devices

D. Šalucha, I. Šimkiene and J. Sabataityte Semiconductor Physics Institute, Goštauto 11, Vilnius, Lithuania

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Received: 26 08 2007;

Nanocrystalline porous silicon films, which have been formed by using simple wet electrochemical etching process in HF electrolyte, were applied for passivation of high power silicon diodes. An optimal technology was designed to manufacture a uniform layer of porous silicon over the area of the p-n junction. The 8% increase in the yield was achieved onO100 mm diameter wafers with 69 cells of diodes in each, by using a very simple technology for the formation of porous layer for passivation of high power silicon diodes.

DOI: 10.12693/APhysPolA.113.1079 PACS numbers: 85.30.Kk, 85.40.Ls, 81.05.Rm