Hot-Electron Transport, Noise, and Power Dissipation in GaN Channels, at High Density of Electrons
A. Matulionis a, J. Liberis a, I. Matulionienė a and M. Ramonas a, b
a Fluctuation Research Laboratory, Semiconductor Physics Institute, A. Goštanto 11, Vilnius 01108, Lithuania
b EIT4, Bundeswehr University, 85577 Neubiberg, Germany
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Received: 26 08 2007;
The experimental results on transport, noise, and dissipation of electric power for voltage-biased Si-doped GaN channels are compared with those of Monte Carlo simulation. The measured dissipated power shows a stronger hot-phonon effect than the simulated one. On the other hand, the experimental results on the electron drift velocity at high electric fields show a weaker hot-phonon effect as compared with the simulated one. The misfit can be reduced if a conversion of the friction-active nonequilibrium longitudinal optical phonons into the friction-passive longitudinal optical phonons is considered.
DOI: 10.12693/APhysPolA.113.967
PACS numbers: 72.20.Ht, 72.70.+m, 72.80.Ey