Electron Charge Noise Minimization, in 130 nm CMOS Preamplifiers
V. Barzdenas and R. Navickas
Computer Engineering Department, Electronics Faculty, Vilnius Gediminas Technical University, Naugarduko Str. 41-447, LT-03227 Vilnius, Lithuania
Full Text PDF
Received: 26 08 2007;
In this paper we present the design aspects for low-power, low-noise CMOS charge sensitive preamplifier that uses a leakage current compensation circuit for use with radiation sensors. The preamplifier has unipolar response with the peaking time of about 45 ns and the gain about 115-145 mV/ke. Equivalent noise charge (ENC) is less than 80 e, when the input charge is 1-20 ke and the sensors capacitance is equal to 30 fF. In this work we present the quality function of the charge sensitive preamplifier, which characterizes best the optimal input transistor width W, with respect to equivalent noise charge and to the power consumptions.
DOI: 10.12693/APhysPolA.113.825
PACS numbers: 84.37.+q, 07.77.Ka