Thermoelectric Power of CeNi4Si and YbNi4Si Compounds

M. Falkowski, A. Kowalczyk Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań, Poland V.H. Tran and W. Miiller W. Trzebiatowski Institute of Low Temperature and Structure Research, Polish Academy of Sciences, P.O. Box 1410, 50-950 Wrocław, Poland

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Received: 9 07 2007;

The thermoelectric power was measured from 4.2 to 300 K for CeNi4Si and YbNi4Si. The thermoelectric power was analysed in the framework of the phenomenological resonance model. According to the model the dominant contribution to thermopower is caused by scattering between electrons of a broad s-band and a narrow f-band with the Lorentzian shape. The electron-hole analogy is reflected in the thermoelectric power behaviour of the investigated compounds.

DOI: 10.12693/APhysPolA.113.303 PACS numbers: 71.20.-b, 72.20.Pa, 71.28.+d