Strain Induced k-Linear Spin Splitting in III-V Semiconductors
A. Skierkowski and J.A. Majewski
Institute of Theoretical Physics, Faculty of Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
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Received: 9 06 2007;
We present theoretical studies of the linear-k strain induced spin splitting of the conduction band in the zinc-blende semiconductors. The studies are based on ab initio calculations performed within the density functional theory with non-scalar relativistic effects fully taken into account. This permits one to construct effective Hamiltonian for the strain induced linear-k spin splitting of the zinc-blende semiconductors. This Hamiltonian reproduces fully the structure of the strain induced linear-k spin splitting and generalizes previously introduced and commonly used effective Hamiltonian.
DOI: 10.12693/APhysPolA.112.455
PACS numbers: 71.70.Fk, 71.15.Rf, 71.70.Ej, 71.55.Eq