Optoelectronic Device Based on Gunn Effect Extended Diode Structure
I. Tralle
Institute of Physics, University of Rzeszów, al. Rejtana 16A, 35-310 Rzeszów, Poland
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Received: 11 09 2006;
We discuss the possibility of light control by means of light diffraction by space charge waves which are the periodic domain trains induced at some circumstances in GaAs Gunn effect diode. The two possible regimes of the proposed device are considered: the first one which is analogous to the Bragg diffraction in case of light-acoustic diffraction and the other one, which we call "intermediate", since the parameter Q which distinguishes the Raman-Nath (Q<1) and the Bragg diffraction (Q>10), in this case is≈1 (actually, only bit smaller than 1). Among the advantages of this hypothetical device are the simpler control of operation and perhaps, possibility to couple it with the waveguides and switchers for surface electromagnetic waves and other miniaturized photonic circuits.
DOI: 10.12693/APhysPolA.111.835
PACS numbers: 42.25.Fx, 42.79.Dj, 42.79.Gn, 42.82.Et, 42.82.Fv