CHARACTERIZATION OF Sn FILMS ON SILICON BY SLOW POSITRON IMPLANTATION SPECTROSCOPY
|N. Nanchevaa, P. Dochevaa, W. Anwandb and G. Brauerb |
aDepartment of Physics, University of Rousse, 7017 Rousse, Bulgaria
b Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf Postfach 51 01 19, 01314 Dresden, Germany
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|Sn films grown on silicon substrate by d.c. magnetron sputtering have been investigated by slow positron implantation spectroscopy. As the substrate bias is one of the most important factors affecting the structure of a sputtered film, films grown at various substrate bias (+80 V, 0 V, -80 V) are compared and their properties are discussed.|
PACS numbers: 68.75.+x, 78.70.