Electrical Conductivity and Thermoelectric Power of a-Se80-xGa20Tex (x=0,5,10,15 and 20) Thin Films
Zishan H. Khana, M. Zulfequarb, M. Ilyasb and M. Husainb
a Department of Applied Sciences & Humanities,Faculty of Engineering & Technology Jamia Millia Islamia, New Delhi-110025, India,
b Department of Physics, Jamia Millia Islamia, New Delhi-110025 India

Received: February 28, 2000; revised version May 15, 2000

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The dc conductivity and thermoelectric power of a-Se80-xGa20Tex (x=0,5,10,15 and 20) thin films were reported in the present work. The free charge carrier concentration was calculated with the help of dc conductivity and thermoelectric power measurements. The calculated values of free charge carrier concentration were used to evaluate the free charge carrier mobility from which grain boundary potential was evaluated. The results are interpreted in terms of small polaron hopping, the structure of Se-Te and the grain boundary potential barrier.
DOI: 10.12693/APhysPolA.98.93
PACS numbers: 73.61.Jc