Electronic Structure and Electron-Transport Properties of (Gd1-xYx)2In Compounds
W. BorgieĊ‚a and J. Deniszczykb
a Institute of Physics, Silesian University, Universytecka 4, 40-007 Katowice, Poland
b Institute of Physics and Chemistry of Metals, Silesian University, Bankowa 12, 40-007 Katowice, Poland
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Based on the electronic structure of the ferromagnetic Gd2In and (Gd0.5 Y0.5)2In compounds the high-temperature magnetic part of the electrical resistivity of (Gd1-xYx)2In as a function of Y concentration was calculated and analyzed. The main interaction which causes the finite magnetic part of the conductivity was assumed in a form of stochastically distributed in space s-f interaction. The calculated resistivity of (Gd1-xYx)2In alloys qualitatively reproduces the experimental data.
DOI: 10.12693/APhysPolA.97.783
PACS numbers: 72.10.-d, 72.15.-v, 71.20.Eh, 71.20.-b