Interaction Between Magnetic Layers in Structures with Narrow-Gap IV-VI Semiconductors |
| V.K. Dugaeva, V.I. Litvinova, W. Dobrowolskib and T. Storyb a Chernovtsy Department of the Institute of Materials Science Problems Ukrainian Academy of Sciences, Vilde 5, 274001 Chernovtsy, Ukraine b Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland |
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| The results of calculation of the indirect exchange interaction between magnetic layers are presented for the case of a structure with narrow-gap semiconducting IV-VI quantum well. The main mechanism is a magnetic polarization of the size-quantized electrons and holes inside the well. This type of interaction is suggested for the explanation of recent experiments on EuS/PbS structures. |
| DOI: 10.12693/APhysPolA.97.455 PACS numbers: 75.70.Cn, 75.50.Pp, 75.70.Ak |