Low Temperature Transport and Magnetic Properties of SmB6 |
| S. Gabania, K. Flachbartb, V. Pavlíkb, E. Konovalovac, Y. Padernoc and T. Herrmannsdörferd a Department of Experimental Physics, P.J. Šafárik University, Park Angelinum 9, 04154 Košice, Slovakia b Institute of Experimental Physics, SAS, 04353 Košice, Slovakia c Institute for Problems of Materials Science, UAS, 252680 Kiev, Ukraine d Physikalisches Institut, Universität Bayreuth, 95440 Bayreuth, Germany |
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| We present results of transport and magnetic properties of three single-crystalline samples of the intermediate valence small-gap semiconductor SmB6 at low temperatures. The received resistivity dependences of the samples below 0.5 K exhibit an activated behavior with an energy gap of a few mK. The temperature dependences of the magnetic susceptibility show an increase below 15 K which can be accounted for by impurities, by bare Sm3+ ions or by a small amount of in-gap magnetic 4f55d1 states. |
| DOI: 10.12693/APhysPolA.97.419 PACS numbers: 75.20.Hr, 71.28.+d |