Anomalous Behavior of the Hall Effect in III-V Heterostructures |
| Z. Dziubaa, M. Górskaa, J. Marczewskib, T. Przesławskib and K. Regińskib a Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland b Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland |
| Received: August 31, 1999; revised version December 2, 1999 |
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| The Hall effect and magnetoresistance were measured in the InAs/GaAs heterostructure at temperatures from 300 K down to 3 K, in a magnetic field range from 0.01 to 1.5 T. The anomalous magnetic field dependence of the Hall coefficient in the InAs/GaAs heterostructure in magnetic fields below 0.1 T was explained as due to an extraordinary Hall effect caused by skew scattering on dislocations. |
| DOI: 10.12693/APhysPolA.97.331 PACS numbers: 61.72.Lk, 72.80.Ey |