Scattering Theory of the Johnson Spin Transistor |
L.S. Geux, A. Brataas and G.E.W. Bauer Delft University of Technology, Laboratory of Applied Physics and DIMES, 2628 CJ Delft, The Netherlands |
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We discuss a simple, semiclassical scattering theory for spin-dependent transport in a many-terminal formulation, with special attention to the four terminal device of Johnson referred to as spin transistor. |
DOI: 10.12693/APhysPolA.97.119 PACS numbers: 73.40.Gk, 73.23.Hk, 75.70.Pa |