Scattering Theory of the Johnson Spin Transistor
L.S. Geux, A. Brataas and G.E.W. Bauer
Delft University of Technology, Laboratory of Applied Physics and DIMES, 2628 CJ Delft, The Netherlands
Full Text PDF
We discuss a simple, semiclassical scattering theory for spin-dependent transport in a many-terminal formulation, with special attention to the four terminal device of Johnson referred to as spin transistor.
DOI: 10.12693/APhysPolA.97.119
PACS numbers: 73.40.Gk, 73.23.Hk, 75.70.Pa